The effect of dislocations on the efficiency of InGaN/GaN solar cells
Identifieur interne : 000361 ( Main/Repository ); précédent : 000360; suivant : 000362The effect of dislocations on the efficiency of InGaN/GaN solar cells
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Abstract
Two solar cells based on an InGaN/GaN p-i-n hetero-junction, but having different dislocation densities, were fabricated and characterized. The structures were grown on c-plane (0001) GaN-on-sapphire templates with different threading dislocation (TD) densities of 5 × 108 and 5 × 109 cm-2. Structural characterization revealed the presence of V-defects in the InGaN epilayer. Since each V-defect was associated with a TD, the structural as well as the optical properties worsened with a higher TD density in the GaN/sapphire template. It was also found that additional dislocations were generated in the p-GaN layer over the V-defects in the InGaN layer. Because of its superior structural quality, the peak external quantum efficiency (EQE) of the low TD density sample was three times higher than that of the high TD density sample.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">The effect of dislocations on the efficiency of InGaN/GaN solar cells</title><author><name sortKey="Zhang, Y" uniqKey="Zhang Y">Y. Zhang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science and Metallurgy, University of Cambridge</s1><s2>Cambridge CB2 3QZ</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Cambridge CB2 3QZ</wicri:noRegion></affiliation></author><author><name sortKey="Kappers, M J" uniqKey="Kappers M">M. J. Kappers</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science and Metallurgy, University of Cambridge</s1><s2>Cambridge CB2 3QZ</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Cambridge CB2 3QZ</wicri:noRegion></affiliation></author><author><name sortKey="Zhu, D" uniqKey="Zhu D">D. Zhu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science and Metallurgy, University of Cambridge</s1><s2>Cambridge CB2 3QZ</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Cambridge CB2 3QZ</wicri:noRegion></affiliation></author><author><name sortKey="Oehler, F" uniqKey="Oehler F">F. Oehler</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science and Metallurgy, University of Cambridge</s1><s2>Cambridge CB2 3QZ</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Cambridge CB2 3QZ</wicri:noRegion></affiliation></author><author><name sortKey="Gao, F" uniqKey="Gao F">F. Gao</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Cavendish Laboratory, University of Cambridge</s1><s2>Cambridge CB3 0HE</s2><s3>GBR</s3><sZ>5 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Cambridge CB3 0HE</wicri:noRegion></affiliation></author><author><name sortKey="Humphreys, C J" uniqKey="Humphreys C">C. J. Humphreys</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science and Metallurgy, University of Cambridge</s1><s2>Cambridge CB2 3QZ</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Cambridge CB2 3QZ</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0303878</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0303878 INIST</idno><idno type="RBID">Pascal:13-0303878</idno><idno type="wicri:Area/Main/Corpus">000750</idno><idno type="wicri:Area/Main/Repository">000361</idno></publicationStmt><seriesStmt><idno type="ISSN">0927-0248</idno><title level="j" type="abbreviated">Sol. energy mater. sol. cells</title><title level="j" type="main">Solar energy materials and solar cells</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium oxide</term><term>Binary compound</term><term>Dislocation</term><term>Dislocation density</term><term>Gallium nitride</term><term>Heterojunction</term><term>High density</term><term>Indium nitride</term><term>Optical properties</term><term>Performance evaluation</term><term>Quantum yield</term><term>Solar cell</term><term>Ternary compound</term><term>Transmission electron microscopy</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Dislocation</term><term>Evaluation performance</term><term>Cellule solaire</term><term>Hétérojonction</term><term>Densité dislocation</term><term>Propriété optique</term><term>Rendement quantique</term><term>Densité élevée</term><term>Microscopie électronique transmission</term><term>Composé ternaire</term><term>Nitrure de gallium</term><term>Nitrure d'indium</term><term>Composé binaire</term><term>Oxyde d'aluminium</term><term>InGaN</term><term>GaN</term><term>Al2O3</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Two solar cells based on an InGaN/GaN p-i-n hetero-junction, but having different dislocation densities, were fabricated and characterized. The structures were grown on c-plane (0001) GaN-on-sapphire templates with different threading dislocation (TD) densities of 5 × 10<sup>8</sup> and 5 × 10<sup>9 </sup>cm<sup>-2</sup>. Structural characterization revealed the presence of V-defects in the InGaN epilayer. Since each V-defect was associated with a TD, the structural as well as the optical properties worsened with a higher TD density in the GaN/sapphire template. It was also found that additional dislocations were generated in the p-GaN layer over the V-defects in the InGaN layer. Because of its superior structural quality, the peak external quantum efficiency (EQE) of the low TD density sample was three times higher than that of the high TD density sample.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0927-0248</s0></fA01><fA03 i2="1"><s0>Sol. energy mater. sol. cells</s0></fA03><fA05><s2>117</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>The effect of dislocations on the efficiency of InGaN/GaN solar cells</s1></fA08><fA11 i1="01" i2="1"><s1>ZHANG (Y.)</s1></fA11><fA11 i1="02" i2="1"><s1>KAPPERS (M. J.)</s1></fA11><fA11 i1="03" i2="1"><s1>ZHU (D.)</s1></fA11><fA11 i1="04" i2="1"><s1>OEHLER (F.)</s1></fA11><fA11 i1="05" i2="1"><s1>GAO (F.)</s1></fA11><fA11 i1="06" i2="1"><s1>HUMPHREYS (C. J.)</s1></fA11><fA14 i1="01"><s1>Department of Materials Science and Metallurgy, University of Cambridge</s1><s2>Cambridge CB2 3QZ</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics, Cavendish Laboratory, University of Cambridge</s1><s2>Cambridge CB3 0HE</s2><s3>GBR</s3><sZ>5 aut.</sZ></fA14><fA20><s1>279-284</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>18016</s2><s5>354000501971110450</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>20 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0303878</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solar energy materials and solar cells</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Two solar cells based on an InGaN/GaN p-i-n hetero-junction, but having different dislocation densities, were fabricated and characterized. The structures were grown on c-plane (0001) GaN-on-sapphire templates with different threading dislocation (TD) densities of 5 × 10<sup>8</sup> and 5 × 10<sup>9 </sup>cm<sup>-2</sup>. Structural characterization revealed the presence of V-defects in the InGaN epilayer. Since each V-defect was associated with a TD, the structural as well as the optical properties worsened with a higher TD density in the GaN/sapphire template. It was also found that additional dislocations were generated in the p-GaN layer over the V-defects in the InGaN layer. Because of its superior structural quality, the peak external quantum efficiency (EQE) of the low TD density sample was three times higher than that of the high TD density sample.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="X"><s0>001D05I03D</s0></fC02><fC02 i1="03" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Dislocation</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Dislocation</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Dislocación</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Evaluation performance</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Performance evaluation</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Evaluación prestación</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Cellule solaire</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Solar cell</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Célula solar</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Hétérojonction</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Heterojunction</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Heterounión</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Densité dislocation</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Dislocation density</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Densidad dislocación</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Propriété optique</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Optical properties</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Propiedad óptica</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Rendement quantique</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Quantum yield</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Rendimiento quántico</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Densité élevée</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>High density</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Densidad elevada</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Microscopie électronique transmission</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Transmission electron microscopy</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Microscopía electrónica transmisión</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Composé ternaire</s0><s5>22</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Ternary compound</s0><s5>22</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Compuesto ternario</s0><s5>22</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Nitrure de gallium</s0><s5>23</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Gallium nitride</s0><s5>23</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Galio nitruro</s0><s5>23</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Nitrure d'indium</s0><s5>24</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Indium nitride</s0><s5>24</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Indio nitruro</s0><s5>24</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Composé binaire</s0><s5>25</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Binary compound</s0><s5>25</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Compuesto binario</s0><s5>25</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Oxyde d'aluminium</s0><s5>26</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Aluminium oxide</s0><s5>26</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Aluminio óxido</s0><s5>26</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>InGaN</s0><s4>INC</s4><s5>82</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>GaN</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Al2O3</s0><s4>INC</s4><s5>84</s5></fC03><fN21><s1>287</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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